W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM

W631GU6MB-11 Memory IC Chip 1Gbit Parallel 933MHz DDR3L SDRAM Memory

Product Description Of W631GU6MB-11
W631GU6MB-11 is a 1G bits DDR3L SDRAM, organized as 8,388,608 words 8 banks 16 bits. This device achieves high speed transfer rates up to 2133 MT/s (DDR3L-2133) for various applications.

Specifications Of W631GU6MB-11

Features Of W631GU6MB-11
Power Supply: 1.35V (typ.), VDD, VDDQ = 1.283V to 1.45V
Backward compatible to VDD, VDDQ = 1.5V ± 0.075V
Double Data Rate architecture: two data transfers per clock cycle
Eight internal banks for concurrent operation
8 bit prefetch architecture
CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14
Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF)
Programmable read burst ordering: interleaved or nibble sequential
Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received with data
Edge-aligned with read data and center-aligned with write data
DLL aligns DQ and DQS transitions with clock
Differential clock inputs (CK and CK#)
Commands entered on each positive CK edge, data and data mask are referenced to both edges of a differential data strobe pair (double data rate)
Posted CAS with programmable additive latency (AL = 0, CL - 1 and CL - 2) for improved command, address and data bus efficiency
Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
Auto-precharge operation for read and write bursts
Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR)
Precharged Power Down and Active Power Down
Data masks (DM) for write data
Programmable CAS Write Latency (CWL) per operating frequency
Write Latency WL = AL + CWL
Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence
System level timing calibration support via write leveling and MPR read pattern
ZQ Calibration for output driver and ODT using external reference resistor to ground
Asynchronous RESET# pin for Power-up initialization sequence and reset function
Programmable on-die termination (ODT) for data, data mask and differential strobe pairs
Dynamic ODT mode for improved signal integrity and preselectable termination impedances during writes
2K Byte page size
Packaged in VFBGA 96 Ball (7.5 x13 mm2 with thickness of 1.0 mm), using lead free materials with RoHS compliant

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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

1 Gbit Memory IC Chip

933 MHz DDR3L SDRAM

Parallel Memory IC Chip

W631GU6MB-11 Memory IC Chip 1 Gbit Parallel 933 MHz DDR3L SDRAM Images